NordAmps develops new types of nano transistors with unique performance. NordAmps technology combines the best of two worlds – the high performance of III-V materials in a scalable technology and with the economy of scale supported by silicon substrates. They develop In(Ga)As nanowire transistors on Si-substrates which supports very high device performance – high operation speed combined with high breakdown voltages. The basis of the technology is 20 years of research pioneered at Lund University. 

NordAmps website